2 edition of Numerical analysis of active microwave semiconductor diodes found in the catalog.
Numerical analysis of active microwave semiconductor diodes
Bibliography: p. 122-126.
|Statement||Miroslav Karásek ; Karel Kieslich.|
|Series||Studie ČSAV ;, 1/84, Studie ČSAV ;, 1984, č. 1.|
|LC Classifications||TK7871.86 .K37 1984|
|The Physical Object|
|Pagination||127 p. :|
|Number of Pages||127|
|LC Control Number||85133796|
In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers modern areas such as Class-F power amplifiers, direct frequency. IMPATT diode is fed at the maximum current densit y, which is exactly the case at the pulsed-mode operation. The idea to use a complex doping profile semiconductor structure for microwave diode was originally proposed in the first analysis of IMPATT diode by (Read, ). This proposed ideal structure has never been realized till now.
The analysis suggests that SiC power rectifiers and MOSFETs could be a superior alternative to all Si power devices with breakdown voltage of as high as V. However, this would require considerable improvements in the SiC device processing technology. The role of different type transit-time diodes in microwave applications is well known. Preface My graduate work was in the area of microwave oscillation mechanisms in semiconductor devices. My contribution was the prediction, analysis, and verification of yet another mode of semiconductor microwave - Selection from Introduction to Numerical Electrostatics Using MATLAB [Book].
The time-domain simultaneous signal and noise analysis of mm-wave/THz devices (diode) modelled as a transmission line is considered. For such devices, stochastic telegrapher's equations of a transmission line are extracted assuming a quasi-transverse electromagnetic mode. Since the analytical solution for these equations does not exist, numerical analysis of such equations is presented here in. ISBN: OCLC Number: Notes: Translation of Fizicheskie osnovy raboty poluprovodnikovykh SVCh diodov. Description: 13, pages illustrations 23 cm.
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TableofContents Choiceofmicrowavesemiconductormaterials MicrowaveSemiconductorfabricationtechnology Thepn-junction Microwavediodes TheIMPATTdiodefamily. The device which is used is a diode, usually of the Schottky barrier type.
Much weaker signals can be detected, and wide bandwidths handled, if a superheterodyne receiver is employed. The active element is again typically a Schottky—barrier diode, employed as a “mixer”, i.e.
a frequency down—: Sigfrid Yngvesson. CiteSeerX - Document Details (Isaac Councill, Lee Giles, Pradeep Teregowda): Abstract: A numerical analysis of the parameters of p-i-n diode microwave switches based on different semiconductor materials is presented. The Si, GaAs, 3C-SiC, 4H-SiC, 6H-SiC and GaN have been analyzed.
The p-i-n diode parameters such as: series resistance, insertion loss and isolation have been studied. Abstract: A numerical analysis of the parameters of p-i-n diode microwave switches based on different semiconductor materials is presented.
The Si, GaAs, 3C-SiC, 4H-SiC, 6H-SiC and GaN have been analyzed. The p-i-n diode parameters such as: series resistance, insertion loss and isolation have been studied.
It is revealed that p-i-n diodes. The DAR diode doping profile was defined the same as in paper for primary analysis to provide the adequate comparison between results which were obtained by two different approaches.
Then the accurate analysis for DAR IMPATT diode has been made for different values of p, n and v region width and the different donor and acceptor concentration level. The analysis showed that the active Cited by: 1. The book discusses in greater detail about the semiconductor devices such as IMPATT diodes, Gunn diodes, HEMT diodes and FET diodes.
It emphasizes on various two and three terminal devices in the microwave and millimeter wave field based on silicon and Groups III. A numerical analysis of the parameters of p-i-n diode microwave switches based on different semiconductor materials is presented.
The Si, GaAs, 3C-SiC. A closed hydrodynamic model and the associated numerical procedures are developed for simulating hot-carrier transport in submicron semiconductor devices. To check the validity of the model, the steady-state characteristics of near-micron n + nn + InP diodes are compared with a standard Monte Carlo approach.
The excellent agreement found fully validates the physical reliability of our model. Key Words: Implicit numerical scheme, active layer structure analysis, DDR and DAR IMPATT diodes.
1 Introduction The power generation in short part of millimeter region is one of the important problems of modern microwave electronics. The IMPATT diodes of different structures are used very frequently in microwave systems.
We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element.
48 m. pokornÝ, z. raida, modeling of microwave semiconductor diodes The doping profile, which defines the geometry of the device, is given by concentrations of acceptors N A and do. At present, the core components used in the rectifier circuit of microwave wireless energy transmission system are commonly used by Agilent’s HSMSX, HSMSX, HSMSX, and HSMSX Ge-based Schottky diodes, which can cover low energy density to high energy density applications [6–8].Compared with Ge semiconductor, strained Ge semiconductor on Si substrate (s-Ge/Si) has.
Diodes and Diode Circuits TLT Basic Analog Circuits / 2 Diode Characteristics Small-Signal Diodes Diode: a semiconductor device, which conduct the current in one direction only. Two terminals: anode and cathode.
When the positive polarity is at the anode – the diode is forward biased and is conducting. The backward diode is made of gallium arsenide semiconductor. This diode is used up to the frequencies of GHz. The abbreviation for the backward diode is BWD.
This diode works at low input power and it provides the high output power. Gunn Diode. It is the microwave semiconductor diode which is used as an oscillator.
In some of the cases. VARACTOR AND STEP RECOVERY DIODE. It is a high-efficiency microwave generator capable of operating from several hundred megahertz to several gigahertz. The basic operation of the oscillator is a semiconductor p-n junction diode reverse biased to current densities well in excess of those encountered in normal avalanche operation.
"Microwave Active Circuit Analysis and Design is an excellent book for final-year undergraduate, postgraduate and early-stage graduate engineers. Having taught Microwave Technology and Radio-Frequency Electronics for over 20 years, this is the closest book to my taught lecture courses.
CiteSeerX - Document Details (Isaac Councill, Lee Giles, Pradeep Teregowda): Abstract: The comparative analysis of the well known DDR (Double Drift Region) IMPATT diode structure and the new n + pvnp + structure for the avalanche diode has been realized on the basis of the precise numerical model.
The new type of the diode was named as the Double Avalanche Region (DAR) IMPATT diode. This book teaches the skills and knowledge required by today’s RF and microwave engineer in a concise, structured and systematic way. Reflecting modern developments in the field, this book focuses on active circuit design covering the latest devices and design techniques.
Microwave semiconductor devices. This page covers Microwave semiconductor devices which include Microwave diode, point contact diode, Hot carrier diode,varactor diode,step recovery diode,Gunn diode,IMPATT,TRAPATT diode, Tunnel diode, microwave transistor and MMIC. As we know at microwave frequencies conventional transistors and diodes do not function as desired due.
Analysis of passive and active microwave components and circuits by using scattering parameters. Theoretical knowledge acquired through lectures is explained by numerical examples.
microwave semiconductor circuits (Schottky diode, PIN diode, varactor, IMPATT diode, Gunn element). Download Microwave Devices and Circuits By Samuel Y.
Liao – An ideal text and a ready reference on the latest in microwave electronic technology, this book provides a unified presentation of microwave solid-state devices, microwave tubes and microwave Third Edition has been extensively revised to better reflect modern advances in microwave technology.Click here to go to our main diode page.
Click here to go to our page on PIN diode switches. Click here to go to our page on reflection phase shifters. Click here to go to our page on reflection attenuators. PIN diodes are the workhorse of the solid-state microwave switch industry!
The acronym "PIN" corresponds to the semiconductor stack of P-type, intrinsic, and N-type material.On this page we pull together all of the Microwaves content on diodes.
Diodes are two-terminal, nonlinear semiconductors used for generating, mixing, detection, and switching of microwave signals. The first diodes were point-contact diode used in crystal radios, years ago.